Intel shared details of 13 papers with innovations in chip manufacturing for the upcoming VLSI Symposium Chip Design Conference.
This work was done by Intel Technology Development, Intel Labs and Intel Design Engineering teams.
Intel executive Ben Cell spoke to the press this week about four disclosures, and Intel is unveiling more circuit innovations that use compute near memory (CNM) technologies to improve the eight-core RISC-V processor.
The 2022 IEEE Symposium on VLSI Technology and Circuits will run from June 13 to June 17 in Honolulu, Hawaii. Intel researchers are presenting 13 papers, including the results of the new state-of-the-art CMOS FinFET technology, Intel 4, showing a performance gain of over 20% over iso-power on Intel 7.
Raja Koduri, Executive Vice President, Intel, “Creating a 2030 Workforce: How to Attract Great Students and Teach Them?” The named circuit panel will participate in the session.
In particular, Intel is publishing the results of Intel 4, a new state-of-the-art complimentary metal-oxide-semiconductor (CMOS) fin field-effect transistor (FinFET) technology, which has gained more than 20% transistor performance gain on iso-power over the Intel 7 process. is showing. .
The Intel 4 process enables a two-fold reduction in the area of high-performance logic libraries, and makes extensive use of Extreme Ultraviolet (EUV) to simplify process flow while also reducing design efforts compared to the Intel 7. These and other key technology advances will drive a new generation of Intel products as Intel moves forward on its roadmap to launch five process nodes in four years last July.
Intel is also unveiling innovative methods and infrastructure improvements that will serve as key components of future solutions. One such circuit innovation uses computer near memory (CNM) technologies to improve the performance of an eight-core RISC-V processor and will be featured in a spotlight demo at the symposium. These and future innovations developed at Intel will not only support Intel’s product portfolio, but also aim to benefit customers of Intel’s new foundry business, Intel Foundry Services (IFS).
For the first time Intel will demonstrate MOCVD of 2D content directly on a 300mm Si platform, including p-type WSe2 for BEOL- and FEOL-application space. MoS2 nFETs show variability that increases with measured geometry.
Venturebeat’s mission Digital Town Square is about to become a place for technical decision makers to gain knowledge about the changing enterprise technology and practices. Learn more about membership.